Fang Tang
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·Paper Publications
Shengdong Hu, Jun Luo, YuYu Jiang, Kun Cheng, Yinhui Chen, Jingjing Jin, Jian’anWang,Jianlin Zhou, Fang Tang(唐枋), Xichuan Zhou, Ping Gan, “Improving breakdown, conductive, and thermal performances for SO Ihigh voltage LDMOS using a partial compound buried layer,” Solid-State Electronics, vol.117, pp. 146–151, 2016.
Release time:2024-01-10 Hits:
Translation or Not: no
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Pre One:：
Yinhui Chen, Shengdong Hu, Kun Cheng, YuYu Jiang, Jun Luo,Jian'an Wang, Fang Tang(唐枋), Xichuan Zhou, Jianlin Zhou, Ping Gan, “A novel low specific on-resistance double-gate LDMOS withmultiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate,” Superlattices and Microstructures, vol.89, pp. 59-67, 2016.
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Next One:：
Bo Wang, Man Kay Law, Amine Bermak and Fang Tang(唐枋), "BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS", IEEE Electron Device Letters, vol.36, pp. 1111-1113, 2015.