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个人信息Personal Information
副教授
硕士生导师
教师英文名称：Qingkai Qian
教师拼音名称：qianqingkai
入职时间：2021-09-01
所在单位：光电工程学院
学历：博士研究生毕业
办公地点：重庆大学虎溪校区信息技术科研楼B328-3
性别：男
联系方式：qqian@cqu.edu.cn
学位：博士学位
毕业院校：香港科技大学
学科：电子科学与技术其他专业
光学工程其他专业
- 1. Q. Qian, R. Zu, Q. Ji, G. S. Jung, K. Zhang, Y. Zhang, M. J. Buehler, J. Kong, V. Gopalan and S. Huang, "Chirality-Dependent Second Harmonic Generation of MoS2 Nanoscroll with Enhanced Efficiency," ACS Nano 14, 13333-13342, 2020
- 2. Q. Qian, X. Shen, D. Luo, L. Jia, M. Kozina, R. Li, M. Lin, A. H. Reid, S. Weathersby, J. Yang, Y. Zhou, K. Zhang, X. Wang and S. Huang, "Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction," ACS Nano 14, 8449–8458, 2020
- 3. Q. Qian, L. Peng, N. Perea-Lopez, K. Fujisawa, K. Zhang, X. Zhang, T. H. Choudhury, J. M. Redwing, M. Terrones, X. Ma, and S. Huang, "Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation," Nanoscale 12, 2047-2056, 2020
- 4. Q. Qian, J. Lei, J. Wei, Z. Zhang, G. Tang, K. Zhong, Z. Zheng, and K. J. Chen, "2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current," npj 2D Mater. Appl. 3, 24, 2019 (selected as Leading Research in Materials Science of Nature Partner Journals)
- 5. Q. Qian, Z. Zhang and K. J. Chen, "Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering," Phys. Rev. B 97, 165409, 2018
- 6. Q. Qian, Z. Zhang and K. J. Chen, "In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study," Langmuir 34, 2882-2889, 2018
- 7. Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, "Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET," Appl. Phys. Express 10, 125201, 2017
- 8. Q. Qian, Z. Zhang, M. Hua, G. Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Enhanced dielectric deposition on single layer MoS2 with low damage using remote N2 plasma treatment," Nanotechnology 28, 175202, 2017
- 9. Q. Qian, B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer," Sci. Rep. 6, 27676, 2016
- 10. Q. Qian, G. Li, Y. Jin, J. Liu, Y. Zou, K. Jiang, S. Fan, and Q. Li, "Trap-State-Dominated Suppression of Electron Conduction in Carbon Nanotube Thin-Film Transistors," ACS Nano 8, 9597, 2014
- 11. Q. Qian, J. Liu, Q. Li, Y. Zou, Y. Jin, G. Li, K. Jiang, and S. Fan, "Modeling and optimization of ambipolar graphene transistors in the diffusive limit," J. Appl. Phys. 114, 164508, 2013
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