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宽禁带半导体器件的仿真及工艺研究
第三/第四代半导体
（SiC、GaN、AlN、Ga
2
O
3
、Diamond）
的缺陷、界面、相变等微观机理对器件热管理、电学特性的影响；功率半导体器件的电-热-力耦合仿真；功率半导体器件封装及抗辐照设计；
MOBILE Version