Q. Qian, Z. Zhang, M. Hua, G. Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Enhanced dielectric deposition on single layer MoS2 with low damage using remote N2 plasma treatment," Nanotechnology 28, 175202, 2017
发布时间：2021-12-04 点击次数：
所属单位：资源与安全学院
发表刊物：CHEMICAL GEOLOGY
关键字：Geochemistry & Geophysics
第一作者：廖志伟
合写作者：胡文瑄(外),曹剑(外),王小林(外),付修根(外)
论文类型：期刊论文
论文编号：214994
卷号：532
页面范围：-
ISSN号：0009-2541
是否译文：否
上一条：Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, "Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET," Appl. Phys. Express 10, 125201, 2017
下一条：Q. Qian, B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer," Sci. Rep. 6, 27676, 2016
