Qingkai Qian
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·Paper Publications
6. Q. Qian, Z. Zhang and K. J. Chen, "In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study," Langmuir 34, 2882-2889, 2018
Release time:2022-04-03  Hits:
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5. Q. Qian, Z. Zhang and K. J. Chen, "Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering," Phys. Rev. B 97, 165409, 2018
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Next One::
7. Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, "Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET," Appl. Phys. Express 10, 125201, 2017