研究方向

• 第一性原理计算，密度泛函理论

• 拓扑性质和拓扑材料

• 低维量子材料

学习及工作经历

2020.09-至今         副教授    物理学院&量子中心，重庆大学

2017.07-2020.08   博士后    凝聚态物理系，以色列Weizmann研究所

2012.09-2017.07   博士       表面实验室，中科院物理所/中国科学院大学

2008-2012.06        本科       物理学基地班，兰州大学

主持项目

2022.01-2024.12         国家自然科学基金青年项目 NSFC 12104072

2021.10-2024.09         重庆市自然科学基金面上项目 cstc2021jcyj-msxmX0640

2021.11-2024.10         重庆市留学创新项目 cx2021050 

代表论文

1. H. X. Fu, C.-X. Liu, B. Yan. Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure. Sci. Adv. 6(10), eaaz0948, 2020.

2. S. Xu#, H. X. Fu#, Y. Tian, T. Deng, J. Cai, J. Wu, T. Tu, T. Li, C. Tan, Y. Liang, C. Zhang, Z. Liu, Z. Liu, Y. Chen, Y. Jiang, B. Yan, H. Peng. Exploiting Two-Dimensional Bi2O2Se for Trace Oxygen Detection. Angew. Chem. Int. Ed. 10.1002/ANIE.202006745,2020. 

3. C. Guo#, X. Meng#, H. X. Fu#, Q. Wang#, H. Wang, Y. Tian, J. Peng, R. Ma, Y. Weng, S. Meng, E. Wang, Y. Jiang. Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision. Phys. Rev. Lett. 124, 206801, 2020 (Editors' Suggestion).

4. H. X. Fu, J. Wu, H. Peng, and B. Yan. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Phys. Rev. B 97, 241203, 2018 (Rapid Communication).

5. Y. Yu#, H. X. Fu#, L. She, S. Lu, Q. Guo, H. Li, S. Meng, G. Cao. Fe on Sb(111): Potential Two-Dimensional Ferromagnetic Superstructures. ACS nano 11, 2143, 2017.

6. H. X. Fu, Z. Liu, C. Lian, J. Zhang, H. Li, J.-T. Sun, S. Meng. Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface. Phys. Rev. B 94, 035427, 2016.

7. H. X. Fu, J. Ren, L. Chen, C. Si, J. Qiu, W. Li, J. Zhang, H. Li, K. Wu, W. Duan, S. Meng. Prediction of Silicon-based Room Temperature Quantum Spin Hall Insulator via Orbital Mixing. Europhys. Lett. 113, 67003, 2016.

8. H. X. Fu, L. Chen, J. Chen, J. Qiu, Z. Ding, J. Zhang, K.Wu, H. Li, S. Meng. Multilayered Silicene: The Bottom-Up Approach for a Weakly Relaxed Si(111) with Dirac Surface States. Nanoscale 7, 15880, 2015.

9. H. X. Fu, J. Zhang, Z. Ding, H. Li, and S. Meng. Stacking-dependent electronic structure of bilayer silicene. Appl. Phys. Lett. 104, 131904, 2014. 

       我们从密度泛函理论出发聚焦于真实材料的新奇物理性质。借助第一性原理计算方法开展新型量子材料的搜寻、拓扑材料和低维量子材料的物性研究、调制与功能化，此外也致力于发展新理论计算方法来揭示和理解新颖的物理现象。

E-mail: hxfu91@gmail.com

Google Scholar主页：https://scholar.google.com/citations?user=TUAAzuwAAAAJ&hl=zh-CN